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Electrical study of fast neutron irradiated devices based on 4H-SiC CVD epitaxial layers
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2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 / [ed] Madar, R; Camassel, J, 2004, Vol. 457-460, 705-708 p.Conference paper, Published paper (Refereed)
Abstract [en]

The radiation-induced defect formation in high purity 4H-SiC CVD epitaxial layers and changes in the electrical properties of diode structures based on its after irradiation with different fluences I MeV neutrons were investigated at temperatures as high as 700 K. The Z(1), deep center, typical for 4H-SiC, was observed both in the initial and irradiated samples. The presence and number of different deep levels increased with the neutron fluence. The rectifying properties of the diode structures disappeared after neutron irradiation with fluence of 6.2x10(14) cm(-2). However, the diode structures that had been degraded after irradiation with fast neutrons, recovered their properties at the temperature of 700 K.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 705-708 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 457-460
Keyword [en]
silicon carbide, neutrons, irradiation, epitaxial layers, defect, deep level
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44400ISI: 000222802200166Scopus ID: 2-s2.0-8744285520OAI: oai:DiVA.org:kth-44400DiVA: diva2:450412
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Lyon, FRANCE, OCT 05-10, 2003
Note

QC 20141208

Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2014-12-08Bibliographically approved

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Hallén, Anders

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