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Optical investigation of the built-in strain in 3C-SiC epilayers
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 / [ed] Madar, R; Camassel, J, 2004, Vol. 457-460, 657-660 p.Conference paper, Published paper (Refereed)
Abstract [en]

The impact of the residual strain ranging from -2.5 GPa to + 0.436 GPa on the electronic properties of 3C-SiC/Si(100) heteroepitaxial layers is investigated by imaging PL spectroscopy. An anomalous above band-gap emission is observed in the blue/green region of spectrum and is tentatively attributed to the manifestation of defect-rich SiC/Si interfaces. A direct correlation of the accumulated strain with the energy gap and the temperature dependence of the band-gap are determined from the analysis of the peak shifts in the fundamental luminescence spectra. The differential pressure coefficient of the band-gap is found to be dE(G)/dp = -5 meV/GPa at room temperature. The observed energy gap narrowing in the temperature interval from 70 to 320 K can be described by the Varshni equation E-G = 2.417 - alphaT(2) (beta + T)(-1) with the parameters alpha = 3.4x10(-4) eV/K and beta = 700 K.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 657-660 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 457-460
Keyword [en]
photoluminescence, 3C-SiC heteroepitaxy, stress
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44399ISI: 000222802200154Scopus ID: 2-s2.0-8744254630OAI: oai:DiVA.org:kth-44399DiVA: diva2:450419
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Lyon, FRANCE, OCT 05-10, 2003
Note

QC 20141208

Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2014-12-08Bibliographically approved

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Linnros, Jan

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CiteExportLink to record
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