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Two-photon spectroscopy of 4H-SiC by using laser pulses at below-gap frequencies
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 / [ed] Madar, R; Camassel, J, 2004, Vol. 457-460, 605-608 p.Conference paper (Refereed)
Abstract [en]

Measurement of two-photon absorption (TPA) coefficient beta in epitaxial 4H-SiC is performed over a wide spectral range using time-resolved spectroscopy and tunable wavelength laser pulses. We find that beta increases exponentially between 0.1 cm/GW < beta < 10 cm/GW over the two-photon energy range 4 eV > 2hv > 5 eV and then saturates to value of 50 cm/GW approaching 2hv = 6.5 eV. The direct optical transitions at the M critical point of zone structure are shown to contribute mainly to the band edge of the TPA spectra.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 605-608 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 457-460
Keyword [en]
free-carrier absorption, time-resolved spectroscopy, two-photon absorption, coefficient, direct band gap transitions, M and L critical points
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-44398ISI: 000222802200141ScopusID: 2-s2.0-8744221491OAI: diva2:450423
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) Location: Lyon, FRANCE Date: OCT 05-10, 2003
QC 20111020Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2011-10-20Bibliographically approved

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