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SiC JMOSFETs for high-temperature stable circuit operation
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2004 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 457-460, 1445-1448 p.Article in journal (Refereed) Published
Abstract [en]

4H-SiC junction-gated and metal-oxide-semiconductor field effect transistors (JMOSFETs) have been fabricated for high temperature stable circuit operation. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300 degreesC. Moreover, by accumulating the channel using the MOS gate, over 2.5 times higher current density than normal JFET operation has been achieved. The temperature dependent I-V and the sub-threshold characteristics have been studied by using 2-dimensional simulation.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004. Vol. 457-460, 1445-1448 p.
Keyword [en]
junction field effect transistors, JMOSFET, 4H-SiC
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44396ISI: 000222802200345Scopus ID: 2-s2.0-8744251293OAI: oai:DiVA.org:kth-44396DiVA: diva2:450526
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) Location: Lyon, France, Date: OCT 05-10, 2003
Note

QC 20111021

Available from: 2011-10-21 Created: 2011-10-20 Last updated: 2017-12-08Bibliographically approved

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Zetterling, Carl-Mikael

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