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Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 457-460, 1437-1440 p.Article in journal (Refereed) Published
Abstract [en]

The electrical characteristics of 4H-SiC junction gated MOSFETs (JMOSFETs) have been investigated by 2-dimensional device simulations. The results have been compared with measured data from 300 K to 573 K. and applied to predict the device performance up to 773 K. Simulation results predict a decrease of the saturation current to 7.5% of its room temperature value as the temperature increases from 300 K to 773 K. However, by applying a proper voltage on the top MOS gate, carrier accumulation can be used to compensate for the reduced mobility and a constant drain current can be maintained over the whole temperature range (300 K - 773 K), where the main deviations for different temperatures are at low drain voltages before the drain current saturates.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004. Vol. 457-460, 1437-1440 p.
Keyword [en]
4H-SiC, JFETs, MOSFETs, high-temperature, I-V characteristics, simulation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44395ISI: 000222802200343Scopus ID: 2-s2.0-8644236641OAI: oai:DiVA.org:kth-44395DiVA: diva2:450532
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) Location: Lyon, FRANCE Date: OCT 05-10, 2003
Note

QC 20111021

Available from: 2011-10-21 Created: 2011-10-20 Last updated: 2017-12-08Bibliographically approved

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Zetterling, Carl-Mikael

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