Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs
2004 (English)In: Integration Of Advanced Micro-And Nanoelectronic Devices-Critical Issues And Solutions / [ed] Morais, J; Kumar, D; Houssa, M; Singh, RK; Landheer, D; Ramesh, R; Wallace, RM; Guha, S; Koinuma, H, 2004, Vol. 811, 19-24 p.Conference paper (Refereed)
In order to combine the merits of both HfO2 and Al2O3 as high-kappa gate dielectrics for CMOS technology, high-kappa nanolaminate structures in the form of either Al2O3/HfO2/Al2O3 or Al2O3/HfAlOx/Al2O3 were implemented in pMOSFETs and electrically and microstructurally charachterized. ALD TiN film was used as the metal gate electrodes for the pMOSFETs. After full transistor-processing including a rapid thermal processing step at 930 T, the HfO2 film in the former nanolaminate was found to be crystallized. In contrast, the HfAlOx layer in the latter nanolaminate remained in the amorphous state. Both types of pMOSFETs exhibited a hysteresis as small as similar to20 mV in C-V characteristics in the bias range of +/- 2 V. They also showed a reduced gate leakage current. The pMOSFET with the Al2O3/HfAlOx/Al2O3 nanolaminate was characterized with a subthreshold slope of 77 mV/decade and a channel hole mobility close to the universal hole mobility curve. The pMOSFET with the Al2O3/HfO2/Al2O3, however, exhibited a subthreshold slope of 100 mV/decade and a similar to30W lower hole mobility than the universal curve.
Place, publisher, year, edition, pages
2004. Vol. 811, 19-24 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 811
IdentifiersURN: urn:nbn:se:kth:diva-44382ISI: 000224411400003ScopusID: 2-s2.0-12744277482ISBN: 1-55899-761-XOAI: oai:DiVA.org:kth-44382DiVA: diva2:450582
Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting, San Francisco, CA, USA, APR 13-16, 2004
QC 201412112011-10-212011-10-202014-12-11Bibliographically approved