Ion beam induced excess vacancies in Si and SiGe and related Cu gettering
2004 (English)In: Gettering And Defect Engineering In Semiconductor Technology / [ed] Richter, H; Kittler, M, 2004, Vol. 95-96, 587-592 p.Conference paper (Refereed)
Implantation-induced excess vacancies and the related Cu gettering was studied in Si and in the solid solution Si0.93Ge0.07. The excess vacancy and interstitial generation during normal and inclined ion implantation can be simulated by a simple binary collision process. The excess defects are shown to control the Cu gettering observed in Si after rapid thermal annealing at a temperature of 900degreesC. The vacancy concentration in the SiGe layer is higher than in Si. An additional vacancy concentration of about 3.15x10(18)cm(-3) was determined in the SiGe layer beside the implantation-generated excess vacancies. These vacancies are presumably incorporated by the SiGe layer deposition on Si substrate. Vacancies agglomerate and form cavities during annealing. The cavities in SiGe were found to be significantly larger than in Si.
Place, publisher, year, edition, pages
2004. Vol. 95-96, 587-592 p.
, Solid State Phenomena, ISSN 1012-0394 ; 95-96
cavities, copper, excess vacancies, ion implantation, R-p/2-gettering, Si, SiGe
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-44380ISI: 000189347700084ScopusID: 2-s2.0-1642479247ISBN: 3-908450-82-9OAI: oai:DiVA.org:kth-44380DiVA: diva2:450593
10th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003) Location: Berlin, Germany, Date: SEP 21-26, 2003
QC 201110212011-10-212011-10-202011-10-21Bibliographically approved