Semiconductor nanostructures for infrared applications
2004 (English)In: Functional Nanomaterials For Optoelectronics And Other Applications / [ed] Lojkowski, W; Blizzard, JR, Trans Tech Publications Inc., 2004, Vol. 99-100, 99-108 p.Conference paper (Refereed)
The results of time-resolved photo luminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells are presented. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission induced by 95 GHz microwave excitation and the exciton fine structure was studied. Very long life times (up to 10 ns) of photoexcited carriers were observed in this system using TRPL at low temperatures and excitation intensities promising higher responsitivity of such QDs for infrared photodetector development. The effects of proton and alpha particles irradiation on carrier dynamics were investigated on different InGaAs/GaAs, InAlAs/AlGaAs and GaAs/AlGaAs QD and QW systems. The results showed that carrier lifetimes in QDs are much less affected by proton irradiation than that in QWs. A strong influence of irradiation on PL intensity was observed in multiple QWs after high-energy alpha particles irradiation.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004. Vol. 99-100, 99-108 p.
, Solid State Phenomena, ISSN 1012-0394 ; 99-100
infrared photodetectors, quantum dots, quantum wells, proton irradiation, alpha particles, photoluminescence, magnetic resonance
IdentifiersURN: urn:nbn:se:kth:diva-44379ISI: 000223533500015ScopusID: 2-s2.0-8644266013OAI: oai:DiVA.org:kth-44379DiVA: diva2:450615
Symposium on Functional Nanomaterials for Optoelectronics and other Applications held at the 2003 E-MRS Fall Meeting Location: Warsaw Univ Technol, Warsaw, Poland, Date: SEP 15-19, 2003
QC 201110212011-10-212011-10-202011-12-06Bibliographically approved