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1.55 mu m VCSELs with InP/air-gap distributed bragg reflectors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, 700-703 p.Conference paper, Published paper (Refereed)
Abstract [en]

The presented VCSELs demonstrate the possibility of fabricating cavities with extremely large Q-factors by using InP/air-gap DBRs. At the same time, the deployed technologies permits to fabricate potentially tunable VCSELs. Photo-pumped and electrically pumped VCSELs and their tunability when working as resonant cavity light emitting diodes are presented. Output powers of up to I 10 mu W at room temperature and a maximum wavelength tuning of 22 nm have been achieved.

Place, publisher, year, edition, pages
2004. 700-703 p.
Series
Conference Proceedings - Indium Phosphide And Related Materials, ISSN 1092-8669
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44363ISI: 000228291000181Scopus ID: 2-s2.0-23744441725ISBN: 0-7803-8595-0 (print)OAI: oai:DiVA.org:kth-44363DiVA: diva2:450712
Conference
16th International Conference on Indium Phosphide and Related Materials Location: Kagoshima, JAPAN Date: MAY 31-JUN 04, 2004
Note

QC 20111021

Available from: 2011-10-21 Created: 2011-10-20 Last updated: 2014-12-09Bibliographically approved

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