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Sulfur doped indium phosphide on silicon substrate grown by epitaxial lateral overgrowth
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8545-6546
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2004 (English)In: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, 334-337 p.Conference paper, Published paper (Refereed)
Abstract [en]

The epitaxial lateral overgrowth (ELOG) of sulfur doped InP from ring shaped openings on SiNx masked InP/Si substrate in low pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High energy transition at 825 nm (1.52 eV) due to the band filling effect caused by high concentration sulfur atoms trapped in threading dislocations was observed in spectra at 80 K. The band edge transition at 875 nm (1.42 eV) in CL spectra has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations that were pined by sulfur atoms due to impurity hardening. The quality of the ELOG InP templates is promising for the integration of photonic active layer on Si substrate.

Place, publisher, year, edition, pages
2004. 334-337 p.
Series
Conference Proceedings - Indium Phosphide And Related Materials, ISSN 1092-8669
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44362ISI: 000228291000087Scopus ID: 2-s2.0-23744490556ISBN: 0-7803-8595-0 (print)OAI: oai:DiVA.org:kth-44362DiVA: diva2:450878
Conference
16th International Conference on Indium Phosphide and Related Materials Location: Kagoshima, JAPAN Date: MAY 31-JUN 04, 2004
Note
QC 20111024Available from: 2011-10-24 Created: 2011-10-20 Last updated: 2011-10-24Bibliographically approved

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Sun, YantingLourdudoss, Sebastian

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