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Towards realization of high quality 2D-photonic crystals in InP/GaInAsP/InP
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, 311-313 p.Conference paper, Published paper (Refereed)
Abstract [en]

Two-dimensional photonic crystals (PhCs) were etched into InP/GaInAsP/InP planar waveguides using chlorine based chemical assisted ion beam etching (CAIBE). Etching mechanisms and process parameters crucial for high quality PhC definition are discussed, with special attention to the lag-effect. The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical properties inside the photonic bandgap are much better compared to both previously reported CAME results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.

Place, publisher, year, edition, pages
2004. 311-313 p.
Series
CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, ISSN 1092-8669
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44361ISI: 000228291000081Scopus ID: 2-s2.0-23744506086ISBN: 0-7803-8595-0 (print)OAI: oai:DiVA.org:kth-44361DiVA: diva2:450884
Conference
16th International Conference on Indium Phosphide and Related Materials Location: Kagoshima, JAPAN Date: MAY 31-JUN 04, 2004
Note
QC 20111024Available from: 2011-10-24 Created: 2011-10-20 Last updated: 2012-01-27Bibliographically approved

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