Modelling of the power pin diode under surge current conditions
2004 (English)In: MODERN PROBLEMS OF RADIO ENGINEERING, TELECOMMUNICATIONS AND COMPUTER SCIENCE, PROCEEDINGS, LVOV: LVIV POLYTECH NATL UNIV , 2004, 529-532 p.Conference paper (Refereed)
Fast recovery silicon power diodes, having radiation induced recombination centres, operating under forward bias at large current densities and high temperatures, have been studied in a detailed way, both experimentally and with the help of device simulation Medici package. The comparison of the dynamic I-V characteristics with the results of numerical simulations is possible only when all the specific features of the measurement set-up are taken into account in the simulations. Such evaluation of the electro-thermal numerical model of the diode under experiment combined with the electro-thermal model of the experimental set-up as the boundary condition for Medici simulation is being presented. The main issue is the definition of the thermal boundary conditions.
Place, publisher, year, edition, pages
LVOV: LVIV POLYTECH NATL UNIV , 2004. 529-532 p.
Si power PiN diode, device modelling, thermal boundary conditions, device simulation, surge current conditions
Computer and Information Science
IdentifiersURN: urn:nbn:se:kth:diva-44306ISI: 000224698800192ScopusID: 2-s2.0-17144400830ISBN: 966-553-380-0OAI: oai:DiVA.org:kth-44306DiVA: diva2:451232
International Conference on Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET 2004) Location: Lviv Slavsko, UKRAINE Date: FEB 24-28, 2004