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Modelling of the power pin diode under surge current conditions
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: MODERN PROBLEMS OF RADIO ENGINEERING, TELECOMMUNICATIONS AND COMPUTER SCIENCE, PROCEEDINGS, LVOV: LVIV POLYTECH NATL UNIV , 2004, 529-532 p.Conference paper, Published paper (Refereed)
Abstract [en]

Fast recovery silicon power diodes, having radiation induced recombination centres, operating under forward bias at large current densities and high temperatures, have been studied in a detailed way, both experimentally and with the help of device simulation Medici package. The comparison of the dynamic I-V characteristics with the results of numerical simulations is possible only when all the specific features of the measurement set-up are taken into account in the simulations. Such evaluation of the electro-thermal numerical model of the diode under experiment combined with the electro-thermal model of the experimental set-up as the boundary condition for Medici simulation is being presented. The main issue is the definition of the thermal boundary conditions.

Place, publisher, year, edition, pages
LVOV: LVIV POLYTECH NATL UNIV , 2004. 529-532 p.
Keyword [en]
Si power PiN diode, device modelling, thermal boundary conditions, device simulation, surge current conditions
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:kth:diva-44306ISI: 000224698800192Scopus ID: 2-s2.0-17144400830ISBN: 966-553-380-0 (print)OAI: oai:DiVA.org:kth-44306DiVA: diva2:451232
Conference
International Conference on Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET 2004) Location: Lviv Slavsko, UKRAINE Date: FEB 24-28, 2004
Available from: 2011-10-25 Created: 2011-10-20 Last updated: 2011-10-25Bibliographically approved

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  • apa
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  • de-DE
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Output format
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