Comparison between implanted and epitaxial pin-diodes on 4H-silicon carbide
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 / [ed] Madar, R; Camassel, J, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2004, Vol. 457-460, 1037-1040 p.Conference paper (Other academic)
Two sets of pin-diodes with epitaxially grown anode regions and implanted anode regions, respectively, were processed on the same low-doped n-type epitaxial layer. The designed breakdown voltage for the epitaxial layer was 5 kV with punch-through at about 2 kV. The almost ideal forward voltage drop of less than 3.5 V at current densities of 100 A cm(-2) of the epitaxial diodes indicates high-level carrier injection into the low-doped epitaxial layer, which is also supported by the results of reverse recovery measurements. At current densities above 10 A cm(-2) the forward voltage drop of the implanted pin-diodes is significantly higher than that of the epitaxial diodes.
Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2004. Vol. 457-460, 1037-1040 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 457-460
mesa diodes, dynamic IV, forward characteristics, reverse recovery, turn-on
IdentifiersURN: urn:nbn:se:kth:diva-43943ISI: 000222802200246ScopusID: 2-s2.0-8744314016OAI: oai:DiVA.org:kth-43943DiVA: diva2:451241
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). Lyon, FRANCE. OCT 05-10, 2003
QC 201110252011-10-252011-10-192011-11-01Bibliographically approved