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Comparison between implanted and epitaxial pin-diodes on 4H-silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 / [ed] Madar, R; Camassel, J, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2004, Vol. 457-460, 1037-1040 p.Conference paper, Published paper (Other academic)
Abstract [en]

Two sets of pin-diodes with epitaxially grown anode regions and implanted anode regions, respectively, were processed on the same low-doped n-type epitaxial layer. The designed breakdown voltage for the epitaxial layer was 5 kV with punch-through at about 2 kV. The almost ideal forward voltage drop of less than 3.5 V at current densities of 100 A cm(-2) of the epitaxial diodes indicates high-level carrier injection into the low-doped epitaxial layer, which is also supported by the results of reverse recovery measurements. At current densities above 10 A cm(-2) the forward voltage drop of the implanted pin-diodes is significantly higher than that of the epitaxial diodes.

Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2004. Vol. 457-460, 1037-1040 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 457-460
Keyword [en]
mesa diodes, dynamic IV, forward characteristics, reverse recovery, turn-on
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-43943ISI: 000222802200246Scopus ID: 2-s2.0-8744314016OAI: oai:DiVA.org:kth-43943DiVA: diva2:451241
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). Lyon, FRANCE. OCT 05-10, 2003
Note
QC 20111025Available from: 2011-10-25 Created: 2011-10-19 Last updated: 2011-11-01Bibliographically approved

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Hallén, Anders

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