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Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII / [ed] Tsen, KT; Song, JJ; Jiang, HX, BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004, Vol. 5352, 299-309 p.Conference paper, Published paper (Refereed)
Abstract [en]

Heavy ion implantation into InP and In0.53Ga0.47As and rapid thermal annealing has been applied to produce materials with high resistivity, good mobility and ultrashort carrier lifetime, as required for ultrafast optoelectronic applications. Two implantation methods have been analyzed: Fe+ implantation into semi-insulating InP and InGaAs, and P+ implantation into p-doped InP and InGaAs. Both approaches allow production of layers with high sheet resistance, up to 10(6) Omega/square for the P+-implanted compounds. Electron mobility in the high resistivity layers is of the order of 10(2) cm(2)V(-1)s(-1). Carrier lifetimes, measured by the time-resolved photoluminescence and reflectivity, can be tuned from similar to100 femtoseconds to tens of picoseconds by choosing implantation and annealing conditions. Measurements of carrier dynamics have shown that carrier traps act as efficient recombination centers, at least for the case of InP. The dependencies of electrical and ultrafast optical properties on the implantation dose and annealing temperature are determined by the interplay between shallow P and As antisite-related donors, deep Fe-related acceptors and defect complexes.

Place, publisher, year, edition, pages
BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004. Vol. 5352, 299-309 p.
Series
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 5352
Keyword [en]
InP, InGaAs, ion implantation, ultrafast carrier trapping, time resolved photoluminescence, transient reflectivity, semi-insulating semiconductor
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-43930DOI: 10.1117/12.526398ISI: 000222660600031Scopus ID: 2-s2.0-3543076385ISBN: 0-8194-5260-2 (print)OAI: oai:DiVA.org:kth-43930DiVA: diva2:451304
Conference
Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII. San Jose, CA. JAN 26-29, 2004
Note
QC 20111025Available from: 2011-10-25 Created: 2011-10-19 Last updated: 2011-11-29Bibliographically approved

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Marcinkevicius, Saulius

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