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Thin films in silicon carbide semiconductor devices
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
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2004 (English)In: Proceedings of SPIE, the International Society for Optical Engineering, ISSN 0277-786X, E-ISSN 1996-756X, Vol. 5774, 5-10 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) semiconductor devices have been established during the last decade as very useful high power, high speed and high temperature devices because of their inherent outstanding semiconductor materials properties. Due to its large band gap, SiC possesses a very high breakdown field and low intrinsic carrier concentration which according makes A high voltage and high temperature operation possible. SiC is also suitable for high frequency device applications, because of the high saturation drift velocity and low permittivity. Thin film technology for various functions in the devices has been heavily researched. Suitable thin film technologies for Ohmic and low-resistive contact formation, passivation and new functionality utilizing ferroelectric materials have been developed. In ferroelectrics, the spontaneous polarization can be switched by an externally applied electric field, and thus are attractive for non-volatile memory and sensor applications. A novel integration of Junction-MOSFETs (JMOSFETs) and Nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is realized. SiC JMOSFET controls the drain current effectively from the buried junction Late thereby allowing for a constant current level at elevated temperatures. SiC NVFET has similar functions with non-volatile memory capability due to ferroelectric gate stack. which operated up to 300degreesC with memory function retained up to 200degreesC.

Place, publisher, year, edition, pages
2004. Vol. 5774, 5-10 p.
Keyword [en]
SiC, device technology, diode, schottky, ohmic, JFET, MOSFET, PZT, FeFET
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-43920DOI: 10.1117/12.607264ISI: 000226292200002Scopus ID: 2-s2.0-25844518994OAI: oai:DiVA.org:kth-43920DiVA: diva2:451448
Conference
5th International Conference on Thin Film Physics and Applications. Shanghai, PEOPLES R CHINA. MAY 31-JUN 02, 2004
Note
QC 20111025Available from: 2011-10-25 Created: 2011-10-19 Last updated: 2017-12-08Bibliographically approved

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Zetterling, Carl Mikael

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