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Determination of nitrogen in silicon carbide by secondary ion mass spectrometry
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2004 (English)In: Journal of Analytical Chemistry, ISSN 1061-9348, E-ISSN 1608-3199, Vol. 59, no 3, 250-254 p.Article in journal (Refereed) Published
Abstract [en]

The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the (26)(CN)(-) fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 10(16) cm(-3). This result is attained in measurements at high mass resolution (M/DeltaM = 7500, interference peak (26)(C-13(2))(-)).

Place, publisher, year, edition, pages
2004. Vol. 59, no 3, 250-254 p.
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Chemical Sciences
URN: urn:nbn:se:kth:diva-45387DOI: 10.1023/B:JANC.0000018968.09670.88ISI: 000220635500012ScopusID: 2-s2.0-3542994488OAI: diva2:452677
QC 20111031Available from: 2011-10-31 Created: 2011-10-28 Last updated: 2011-10-31Bibliographically approved

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Hallén, Anders
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Microelectronics and Information Technology, IMIT
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