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Continuously tunable 1.55-mu m VCSEL implemented by precisely curved dielectric top DBR involving tailored stress
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 16, no 3, 720-722 p.Article in journal (Refereed) Published
Abstract [en]

We present an optically pumped and continuously tunable 1.55-mum vertical-cavity surface-emitting laser (VCSEL). The device shows. 26-mn spectral tuning range, 400-muW maximum output power, and 57-dBm side-mode suppression ratio. The VCSEL is implemented using a two-chip concept. The movable top mirror membrane is precisely designed to obtain a tailored air-gap length (L' = 16 mum) and a radius of curvature (ROC = 4.5 mm) in order to efficiently support the fundamental optical mode of the plane-concave resonator. It consists of a distributed Bragg reflector (DBR) with periodic, differently stressed silicon nitride and silicon dioxide multilayers implemented by plasma-enhanced chemical vapor deposition. The lower InP-based part, comprising the InP-InGaAsP bottom DBR and the active region, is grown monolithicaily using metal-organic vapor phase epitaxy.

Place, publisher, year, edition, pages
2004. Vol. 16, no 3, 720-722 p.
Keyword [en]
microelectromechanical devices, optical resonators, surface-emitting lasers, wavelength-division multiplexing
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-45368DOI: 10.1109/LPT.2004.823734ISI: 000220018500005ScopusID: 2-s2.0-1642587062OAI: diva2:452793
QC 20111031Available from: 2011-10-31 Created: 2011-10-28 Last updated: 2011-10-31Bibliographically approved

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