InP-based optically pumped VECSEL operating CW at 1550 nm
2004 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 16, no 2, 362-364 p.Article in journal (Refereed) Published
We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 70 mW was obtained under multitransverse mode operation at 233 K. Under single-mode operation, we obtained a maximum power of 60 mW with a beam quality factor M-2 less than 1.1.
Place, publisher, year, edition, pages
2004. Vol. 16, no 2, 362-364 p.
external cavity, high-power laser, InGaAsP, InP, optical pumping, quantum well (QW), semiconductor laser, surface-emitting laser, vertical cavity, vertical external-cavity surface-emitting laser (VECSEL)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-45475DOI: 10.1109/LPT.2003.823127ISI: 000189020000004ScopusID: 2-s2.0-1442313207OAI: oai:DiVA.org:kth-45475DiVA: diva2:452794
QC 201110312011-10-312011-10-312011-10-31Bibliographically approved