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InP-based optically pumped VECSEL operating CW at 1550 nm
KTH, Superseded Departments, Electrum Laboratory.
2004 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 16, no 2, 362-364 p.Article in journal (Refereed) Published
Abstract [en]

We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 70 mW was obtained under multitransverse mode operation at 233 K. Under single-mode operation, we obtained a maximum power of 60 mW with a beam quality factor M-2 less than 1.1.

Place, publisher, year, edition, pages
2004. Vol. 16, no 2, 362-364 p.
Keyword [en]
external cavity, high-power laser, InGaAsP, InP, optical pumping, quantum well (QW), semiconductor laser, surface-emitting laser, vertical cavity, vertical external-cavity surface-emitting laser (VECSEL)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-45475DOI: 10.1109/LPT.2003.823127ISI: 000189020000004Scopus ID: 2-s2.0-1442313207OAI: oai:DiVA.org:kth-45475DiVA: diva2:452794
Note
QC 20111031Available from: 2011-10-31 Created: 2011-10-31 Last updated: 2017-12-08Bibliographically approved

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