High-resolution short range ion detectors based on 4H-SiC films
2004 (English)In: Technical physics letters, ISSN 1063-7850, E-ISSN 1090-6533, Vol. 30, no 7, 575-577 p.Article in journal (Refereed) Published
The energy resolution of SiC detectors has been studied in application to the spectrometry of alpha particles with 5.1-5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n-4H-SiC film with a thickness of 26 mum and an uncompensated donor concentration of (1-2) x 10(15) cm(-3). An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the alpha particle spectrum to be revealed. The average energy of the electron-hole pair formation in 4H-SiC is estimated at 7.71 eV.
Place, publisher, year, edition, pages
2004. Vol. 30, no 7, 575-577 p.
IdentifiersURN: urn:nbn:se:kth:diva-45835DOI: 10.1134/1.1783406ISI: 000223054700016OAI: oai:DiVA.org:kth-45835DiVA: diva2:453338
QC 201111022011-11-022011-11-012011-11-02Bibliographically approved