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Full band Monte Carlo simulation of cubic and hexagonal silicon carbide polytypes and devices
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 61-65 p.Article in journal (Refereed) Published
Abstract [en]

The GEMS (General Monte Carlo Semiconductor) simulator is a full band ensemble program developed at Mid-Sweden University. A principal objective of the project is to create a flexible tool that can be used for the exploration of properties of new semiconductor materials as well as devices fabricated of these materials. Both cubic and hexagonal crystal symmetries can be handled with the simulator, and any material with these symmetries can be simulated if an appropriate electronic band structure together with the parameters for the scattering mechanisms is provided. During the development of GEMS a large number of studies have been performed of bulk charge transport and device characteristics. The simulated materials are 2H-, 3C-, 4H- and 6H-SiC, as well as silicon. This presentation discusses the charge transport properties of the studied SiC polytypes, and the resulting performance of the simulated devices.

Place, publisher, year, edition, pages
2004. Vol. T114, 61-65 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-46157DOI: 10.1088/0031-8949/2004/T114/014ISI: 000204272000015Scopus ID: 2-s2.0-39549106474OAI: oai:DiVA.org:kth-46157DiVA: diva2:453354
Note
QC 20111102Available from: 2011-11-02 Created: 2011-11-02 Last updated: 2017-12-08Bibliographically approved

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