Variation of contact resistivity with Ge in TiW/p(+) SiGe contacts
2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 49-52 p.Article in journal (Refereed) Published
The dependence of contact resistivity on the Ge content in Si1-xGex is examined for TiW/p(+) Si1-xGex interfaces. Measurements are made on contacts with epitaxial Si1-xGex layers either at the surface or buried under a Si cap layer of various thicknesses. The contact resistivity is found to decrease by an order of magnitude with increasing Ge content from 0 to 30 at. %, which is attributed to an increase in the valence band energy of p(+) Si1-xGex. The measured contact resistivity is compared with a theoretical model, and the experimental results agree well with the modelled ones.
Place, publisher, year, edition, pages
2004. Vol. T114, 49-52 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-46156DOI: 10.1088/0031-8949/2004/T114/011ISI: 000204272000012ScopusID: 2-s2.0-39549115218OAI: oai:DiVA.org:kth-46156DiVA: diva2:453357
QC 201111022011-11-022011-11-022011-11-02Bibliographically approved