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Variation of contact resistivity with Ge in TiW/p(+) SiGe contacts
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
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2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 49-52 p.Article in journal (Refereed) Published
Abstract [en]

The dependence of contact resistivity on the Ge content in Si1-xGex is examined for TiW/p(+) Si1-xGex interfaces. Measurements are made on contacts with epitaxial Si1-xGex layers either at the surface or buried under a Si cap layer of various thicknesses. The contact resistivity is found to decrease by an order of magnitude with increasing Ge content from 0 to 30 at. %, which is attributed to an increase in the valence band energy of p(+) Si1-xGex. The measured contact resistivity is compared with a theoretical model, and the experimental results agree well with the modelled ones.

Place, publisher, year, edition, pages
2004. Vol. T114, 49-52 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-46156DOI: 10.1088/0031-8949/2004/T114/011ISI: 000204272000012ScopusID: 2-s2.0-39549115218OAI: oai:DiVA.org:kth-46156DiVA: diva2:453357
Note
QC 20111102Available from: 2011-11-02 Created: 2011-11-02 Last updated: 2011-11-02Bibliographically approved

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Persson, StefanWu, DongpingLindgren, Ann ChatrinHellström, Per-ErikZhang, Shi-Li
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