Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon
2011 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 332, no 1, 27-33 p.Article in journal (Refereed) Published
Epitaxial lateral overgrowth of InP from mesh and line openings on masked InP seed layer on Si(0 0 1) wafer is investigated. Coalescence occurred more rapidly from the mesh openings than from the line openings. Lethargic coalescence in the line openings is attributed to the gradual formation of growth retarding boundary planes in the initial stages of growth. Extended growth leads to complete coalescence in both types of openings. The surface roughness of the coalesced layer is inversely proportional to its thickness. Cathodoluminescence studies on the uncoalesced islands show the emergence of facets with orientation-dependent dopant concentration, but reveal no defects, in contrast to the coalesced regions. The latter are relaxed and their dislocation density deduced from panchromatic cathodoluminescence mapping varies from 6 x 10(6) to 4 x 10(7) cm(-2) depending on the layer thickness; the reduced density at higher thickness indicates partial self annihilation of dislocations. TEM cross-section studies show that most of the threading dislocations originating in the InP seed layer/Si interface are blocked by the mask, but new dislocations are generated. Some of these dislocations are associated with bounding planar defects such as stacking faults, possibly generated during lateral growth across the mask due to unevenness of the mask surface.
Place, publisher, year, edition, pages
2011. Vol. 332, no 1, 27-33 p.
Characterization, Crystal morphology, Defects, Hydride vapor phase epitaxy, Semiconductor III-V materials
IdentifiersURN: urn:nbn:se:kth:diva-46176DOI: 10.1016/j.jcrysgro.2011.07.022ISI: 000295304200006ScopusID: 2-s2.0-80052330407OAI: oai:DiVA.org:kth-46176DiVA: diva2:453517
QC 201111022011-11-022011-11-022014-05-23Bibliographically approved