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Photoluminescence measurements of zero-phonon optical transitions in silicon nanocrystals
KTH, School of Information and Communication Technology (ICT), Material Physics.ORCID iD: 0000-0003-2562-0540
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 12, 125326- p.Article in journal (Refereed) Published
Abstract [en]

Optical transitions in silicon nanocrystals with different surface passivations were probed at low temperatures on a single-particle level. A type of quasidirect recombination process, different from the quantum-confined exciton transition, is identified. The luminescence spectra have different emission energies, but the contribution of a no-phonon transition is significantly higher than expected from the quantum-confinement model. Its relative strength was found to be temperature dependent, suggesting spatial localization of excitons as a possible origin.

Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 84, no 12, 125326- p.
Keyword [en]
SI NANOCRYSTALS; LIGHT-EMISSION; QUANTUM DOTS; LASER
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-46184DOI: 10.1103/PhysRevB.84.125326ISI: 000295484300012Scopus ID: 2-s2.0-80053926247OAI: oai:DiVA.org:kth-46184DiVA: diva2:453569
Funder
Swedish Research Council
Note
QC 20111103Available from: 2012-01-19 Created: 2011-11-02 Last updated: 2017-12-08Bibliographically approved

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Sychugov, IlyaLinnros, Jan

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