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Self-consistent simulations of mesoscopic devices operating under a finite bias
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 7, 1147-1154 p.Article in journal (Refereed) Published
Abstract [en]

A novel numerical algorithm based on the solution of the two-dimensional effective mass equation for current-carrying scattering states in mesoscopic devices is developed. Using this while allowing for an energy dependent transmission matrix, the total charge density distribution based on all electrons injected into the device is calculated through integration over energy. By coupling this energy-resolved calculation of charge density distribution iteratively with a potential calculation a fully self-consistent calculation, which allows for accurate simulations of mesoscopic devices with arbitrary complex device geometries operating under a finite bias, is achieved. Thus it is possible to self-consistently study space charge effects in mesoscopic devices. The developed method is described and tested on a number of sample geometries.

Place, publisher, year, edition, pages
2004. Vol. 48, no 7, 1147-1154 p.
Keyword [en]
self-consistent simulations, scattering states, electron transport, charge density distribution, mesoscopic devices
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-41841DOI: 10.1016/j.sse.2003.12.040ISI: 000221174100009Scopus ID: 2-s2.0-1842843663OAI: oai:DiVA.org:kth-41841DiVA: diva2:453685
Note
QC 20111103Available from: 2011-11-03 Created: 2011-10-03 Last updated: 2017-12-08Bibliographically approved

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