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The effect of hard nitridation on Al(2)O(3) using a radio frequency operated plasma cell
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2011 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 22, 7796-7802 p.Article in journal (Refereed) Published
Abstract [en]

We report on an atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) investigation of hard nitridation of sapphire (alpha.-Al(2)O(3)) substrate, using an Epi UNI-Bulb RF plasma cell at substrate temperatures ranging from 250 to 600 degrees C. Our results show that an AlN(1-x)O(x) layer forms on sapphire after extended nitridation at all temperatures, following a Stranski-Krastanov growth mode, with less islands forming at higher temperatures. We also observe a layer-dependent charging shift in XPS, separating smooth AlN(1-x)O(x) layers from rough AlN(1-x)O(x) islands due to their different electronic coupling to the substrate. Although the island growth is suppressed at higher temperatures, the surface roughness increases at higher temperatures as seen by AFM. We also observe sputtering effects with protrusions and pits.

Place, publisher, year, edition, pages
2011. Vol. 519, no 22, 7796-7802 p.
Keyword [en]
Nitridation, Sapphire, Al(2)O(3), Radio-frequency plasma, X-ray photoelectron spectroscopy, Atomic force microscopy
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-46861DOI: 10.1016/j.tsf.2011.04.227ISI: 000295057000030Scopus ID: 2-s2.0-80052122617OAI: oai:DiVA.org:kth-46861DiVA: diva2:454337
Funder
Swedish Research Council
Note
QC 20111107Available from: 2011-11-07 Created: 2011-11-07 Last updated: 2017-12-08Bibliographically approved

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