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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
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2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 6, 063711- p.Article in journal (Refereed) Published
Abstract [en]

We explore the possibility to define an effective mass parameter to describe hole transport in inversion layers in bulk MOSFETs and silicon-on-insulator devices. To do so, we employ an accurate and computationally efficient self-consistent simulator based on the six-band k . p model. The valence band structure is computed for different substrate orientations and silicon layer thicknesses and is then characterized through the calculation of different effective masses taking account of the channel direction. The effective masses for quantization and density of states are extracted from the computed energy levels and subband populations, respectively. For the transport mass, a weighted averaging procedure is introduced and justified by comparing the results with hole mobility from experiments and simulations.

Place, publisher, year, edition, pages
2011. Vol. 110, no 6, 063711- p.
Keyword [en]
electron-transport, band-structure, monte-carlo, semiconductors, transistors, mobility, si
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-46857DOI: 10.1063/1.3639281ISI: 000295619300066Scopus ID: 2-s2.0-80053554009OAI: oai:DiVA.org:kth-46857DiVA: diva2:454347
Note
QC 20111107Available from: 2011-11-07 Created: 2011-11-07 Last updated: 2017-12-08Bibliographically approved

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Hellström, Per-ErikMalm, Gunnar

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