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Phase Predistortion of a Class-D Outphasing RF Amplifier in 90 nm CMOS
KTH, School of Electrical Engineering (EES), Centres, ACCESS Linnaeus Centre. KTH, School of Electrical Engineering (EES), Signal Processing.
KTH, School of Electrical Engineering (EES), Signal Processing. KTH, School of Electrical Engineering (EES), Centres, ACCESS Linnaeus Centre.ORCID iD: 0000-0002-2718-0262
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2011 (English)In: IEEE Transactions on Circuits and Systems - II - Express Briefs, ISSN 1549-7747, E-ISSN 1558-3791, Vol. 58, no 10, 642-646 p.Article in journal (Refereed) Published
Abstract [en]

This brief presents a behavioral model structure and a model-based phase-only predistortion method that are suitable for outphasing RF amplifiers. The predistortion method is based on a model of the amplifier with a constant gain factor and phase rotation for each outphasing signal, and a predistorter with phase rotation only. The method has been used for enhanced data rates for GSM evolution (EDGE) and wideband code-division multiple-access (WCDMA) signals applied to a Class-D outphasing RF amplifier with an on-chip transformer used for power combining in 90-nm CMOS. The measured peak power at 2 GHz was +10.3 dBm with a drain efficiency and power-added efficiency of 39% and 33%, respectively. For an EDGE 8 phase-shift-keying (8-PSK) signal with a phase error of 3 degrees between the two input outphasing signals, the measured power at 400 kHz offset was -65.9 dB with predistortion, compared with -53.5 dB without predistortion. For a WCDMA signal with the same phase error between the input signals, the measured adjacent channel leakage ratio at 5-MHz offset was -50.2 dBc with predistortion, compared with -38.0 dBc without predistortion.

Place, publisher, year, edition, pages
2011. Vol. 58, no 10, 642-646 p.
Keyword [en]
Amplifier, complementary metal-oxide-semiconductor (CMOS), linearization, outphasing
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-46850DOI: 10.1109/TCSII.2011.2164149ISI: 000296009700006Scopus ID: 2-s2.0-80054876012OAI: oai:DiVA.org:kth-46850DiVA: diva2:454382
Funder
Swedish Research Council
Note
QC 20111107Available from: 2011-11-07 Created: 2011-11-07 Last updated: 2017-12-08Bibliographically approved

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Händel, Peter

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