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Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO(2)
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9008-8402
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2008 (English)In: Journal of Physics Conference Series, IOP Science , 2008, Vol. 100Conference paper (Refereed)
Abstract [en]

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).

Place, publisher, year, edition, pages
IOP Science , 2008. Vol. 100
, Journal of Physics Conference Series, ISSN 1742-6588
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-47312DOI: 10.1088/1742-6596/100/8/082006ISI: 000275655200284ScopusID: 2-s2.0-77954332382OAI: diva2:454739
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, Sweden, July 2-6, 2007.
QC 20111110Available from: 2011-11-10 Created: 2011-11-08 Last updated: 2011-11-10Bibliographically approved

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