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Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO(2)
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0001-9008-8402
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2008 (English)In: Journal of Physics Conference Series, IOP Science , 2008, Vol. 100Conference paper, Published paper (Refereed)
Abstract [en]

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).

Place, publisher, year, edition, pages
IOP Science , 2008. Vol. 100
Series
Journal of Physics Conference Series, ISSN 1742-6588
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-47312DOI: 10.1088/1742-6596/100/8/082006ISI: 000275655200284Scopus ID: 2-s2.0-77954332382OAI: oai:DiVA.org:kth-47312DiVA: diva2:454739
Conference
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, Sweden, July 2-6, 2007.
Note

QC 20111110

Available from: 2011-11-10 Created: 2011-11-08 Last updated: 2017-04-07Bibliographically approved

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Gylfason, Kristinn B.Gudmundsson, Jon Tomas

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