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Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 24, 245325- p.Article in journal (Refereed) Published
Abstract [en]

The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. The lowest two subbands of the two-dimensional electron gas in the heterointerface were populated. After the low temperature illumination, the electron density increases from 11.99x10(12) cm(-2) to 13.40x10(12) cm(-2) for the first subband and from 0.66x10(12) cm(-2) to 0.94x10(12) cm(-2) for the second subband. The persistent photoconductivity effect (similar to 13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density of 9.40x10(12) cm(-2). We obtained the energy separation between the first and second subbands to be 105 meV.

Place, publisher, year, edition, pages
2006. Vol. 74, no 24, 245325- p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-47112DOI: 10.1103/PhysRevB.74.245325ISI: 000243195800087ScopusID: 2-s2.0-33845771340OAI: diva2:454740
QC 20111108Available from: 2011-11-08 Created: 2011-11-07 Last updated: 2011-11-08Bibliographically approved

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Aggerstam, ThomasLourdudoss, Sebastian
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Electrum Laboratory, ELAB
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