Wafer-level integration of NiTi shape memory alloy wires for the fabrication of microactuators using standard wire bonding technology
2011 (English)In: 24th International Conference on Micro Electro Mechanical Systems (MEMS), 2011 IEEE, IEEE , 2011, 348-351 p.Conference paper (Refereed)
This paper reports on the first integration of SMA wires into silicon based MEMS structures using a standard wire bonder. This approach allows fast and efficient placement, alignment and mechanical attachment of NiTi-based SMA wires to silicon-based MEMS. The wires are mechanically anchored and clamped into deep-etched silicon structures on a wafer. The placement precision is high with an average deviation of 4 #x03BC;m and the mechanical clamping is strong, allowing successful actuation of the SMA wires.
Place, publisher, year, edition, pages
IEEE , 2011. 348-351 p.
, Proceedings: IEEE micro electro mechanical systems, ISSN 1084-6999
MEMS structures;NiTi;SMA wires;deep-etched silicon structures;mechanical clamping;microactuator fabrication;shape memory alloy wire;size 4 mum;standard wire bonding technology;wafer-level integration;etching;lead bonding;microactuators;nickel compounds;wafer level packaging;
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-47428DOI: 10.1109/MEMSYS.2011.5734433ISI: 000295841200086ScopusID: 2-s2.0-79953794837OAI: oai:DiVA.org:kth-47428DiVA: diva2:455234
24th International Conference on Micro Electro Mechanical Systems (MEMS), 2011 IEEE
© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.QC 201111102011-11-182011-11-092011-12-08Bibliographically approved