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A WAFER-LEVEL, HETEROGENEOUSLY INTEGRATED, HIGH FLOW SMA-SILICON GAS MICROVALVE
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0001-8248-6670
2011 (English)In: 16th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (IEEE TRANSDUCERS 2011), NEW YORK, NY: IEEE conference proceedings, 2011, 1781-1784 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents a novel gas microvalve design in which a flow control gate is opened by the pneumatic pressure and closed by a SMA actuator, allowing large flow control. The microvalves were fabricated using a novel wafer-level Au-Si eutectic bonding process for TiNi to silicon integration. The resulting microvalves demonstrate a record pneumatic performance per footprint area; a microvalve of only 1×3.3 mm2 footprint successfully controls 3000 sccm at a pressure drop of 130 kPa.

Place, publisher, year, edition, pages
NEW YORK, NY: IEEE conference proceedings, 2011. 1781-1784 p.
Keyword [en]
Microvalve, SMA, TiNi, eutectic bonding, heterogeneous integration, shape memory alloy, wafer bonding
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-47631DOI: 10.1109/TRANSDUCERS.2011.5969424Scopus ID: 2-s2.0-80052127998OAI: oai:DiVA.org:kth-47631DiVA: diva2:455841
Conference
16th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (IEEE TRANSDUCERS 2011),Beijing, China, 5-9 Jun, 2011
Note

QC 20111117

Available from: 2011-11-11 Created: 2011-11-11 Last updated: 2015-10-26Bibliographically approved

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Stemme, GöranWijngaart, Wouter van der

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