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Nanometer-scale flatness and reliability investigation of stress-compensated symmetrically-metallized monocrystalline-silicon multi-layer membranes
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology.
2010 (English)In: 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2010, 959-962 p.Conference paper, Published paper (Other academic)
Place, publisher, year, edition, pages
2010. 959-962 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-48382Scopus ID: 2-s2.0-78649271711OAI: oai:DiVA.org:kth-48382DiVA: diva2:457461
Conference
5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. Xiamen. 20 January 2010 - 23 January 2010
Note
QC 20111123Available from: 2011-11-17 Created: 2011-11-17 Last updated: 2011-11-23Bibliographically approved

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Stemme, Göran

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