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1 µm saturable absorber with recovery time reduced by lattice mismatch
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 7, 071112-1-071112-3 p.Article in journal (Refereed) Published
Abstract [en]

Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses

Place, publisher, year, edition, pages
2006. Vol. 89, no 7, 071112-1-071112-3 p.
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Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-48941DOI: 10.1063/1.2337278ISI: 000239842400012Scopus ID: 2-s2.0-33747478641OAI: oai:DiVA.org:kth-48941DiVA: diva2:458897
Note
QC 20111129Available from: 2011-11-24 Created: 2011-11-24 Last updated: 2017-12-08Bibliographically approved

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Marcinkevicius, Saulius

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