1 µm saturable absorber with recovery time reduced by lattice mismatch
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 7, 071112-1-071112-3 p.Article in journal (Refereed) Published
Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses
Place, publisher, year, edition, pages
2006. Vol. 89, no 7, 071112-1-071112-3 p.
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-48941DOI: 10.1063/1.2337278ISI: 000239842400012ScopusID: 2-s2.0-33747478641OAI: oai:DiVA.org:kth-48941DiVA: diva2:458897
QC 201111292011-11-242011-11-242011-11-29Bibliographically approved