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Semiconductor saturable absorbers with recovery time controlled by lattice mismatch
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2007 (English)In: Optical Components and Materials IV / [ed] Shibin Jiang, Michel J. F. Digonnet, 2007, 64690P-1-64690P-7 p.Conference paper (Refereed)
Abstract [en]

We propose and demonstrate a new method to reduce the absorption recovery time of semiconductor saturable absorber mirrors operating at the 1060-nm wavelength range. The method is based on controlling the amount of nonradiative recombination centers within the absorbing region by incorporating an InGaP epitaxial layer with a relative large lattice mismatch to GaAs (~2.2 %). The defect density within the absorbing region can be controlled by the thickness of a GaAs buffer layer grown between the InGaP lattice mismatched layer and the InGaAs/GaAs quantum-wells. For thickness of the GaAs buffer of ∼110 nm and∼570 nm the absorption recovery time was∼5 ps and ∼10 ps, respectively. It is important to note that the fast recovery time was achieved without degrading the nonlinear optical properties of the saturable absorber mirror. The practicality of the structures was proved by demonstrating a reliable self-starting operation of a mode-locked Yb-doped fiber laser.

Place, publisher, year, edition, pages
2007. 64690P-1-64690P-7 p.
Keyword [en]
semiconductor saturable absorber mirrors, nonlinear optics, mode-locking, fiber lasers
National Category
Atom and Molecular Physics and Optics
URN: urn:nbn:se:kth:diva-48947DOI: 10.1117/12.700273ISI: 000246050500021ScopusID: 2-s2.0-34248668166OAI: diva2:458945
Conference on Optical Components and Materials IV. San Jose, CA. JAN 22-24, 2007
QC 20111130Available from: 2011-11-24 Created: 2011-11-24 Last updated: 2011-11-30Bibliographically approved

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Marcinkevicius, Saulius
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