Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography
2010 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 21, no 28, 285307- p.Article in journal (Refereed) Published
A novel top-down approach for the controllable fabrication of semiconductor nanostructures exhibiting quantum effects is described. By decomposing metal-rich precursor gas molecules with an electron beam, a sub-10 nm metal pattern can be formed and subsequently transferred to a semiconductor substrate. In such a way monocrystalline silicon nanodots and nanowires are produced as revealed by transmission electron microscopy. It is also shown how through controlled thermal or chemical oxidation the nanostructure surface can be passivated. By providing direct access to the sub-10 nm size range this method possesses promising potential for application in the quantum dot and nanoelectronics fields.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2010. Vol. 21, no 28, 285307- p.
silicon nanostructures, quantum dot, nanowire, EBID
Accelerator Physics and Instrumentation
IdentifiersURN: urn:nbn:se:kth:diva-49005DOI: 10.1088/0957-4484/21/28/285307ISI: 000279259100020OAI: oai:DiVA.org:kth-49005DiVA: diva2:459125
QC 201111292012-01-272011-11-242012-01-27Bibliographically approved