InP lateral overgrowth technology for silicon photonics
2010 (English)In: 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010, Optical Society of America, 2010, 377-378 p.Conference paper (Refereed)
Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By optimizing the process, a dislocation free InP layer has been successfully grown on top of silicon wafer, which can be used as the base for active devices.
Place, publisher, year, edition, pages
Optical Society of America, 2010. 377-378 p.
epitaxial lateral overgrowth, silicon photonics, integrated optics materials, semiconducting III-V materials, hydride vapour phase epitaxy
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-49558DOI: 10.1109/ACP.2010.5682513ISI: 000292740900005ScopusID: 2-s2.0-84897664129ISBN: 978-142447111-9OAI: oai:DiVA.org:kth-49558DiVA: diva2:459845
Asia Communications and Photonics Conference and Exhibition, ACP 2010; Shanghai; 8 December 2010 through 12 December 2010
FunderICT - The Next Generation
QC 201111282011-11-282011-11-282014-10-09Bibliographically approved