Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser
2011 (English)In: Optical and quantum electronics, ISSN 0306-8919, E-ISSN 1572-817X, Vol. 42, no 11-13, 659-666 p.Article in journal (Refereed) Published
A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.
Place, publisher, year, edition, pages
2011. Vol. 42, no 11-13, 659-666 p.
Transistor laser, VCSEL, Numerical modeling, Quantum-trap model, Direct modulation
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-48519DOI: 10.1007/s11082-011-9444-0ISI: 000296377000002ScopusID: 2-s2.0-80755163171OAI: oai:DiVA.org:kth-48519DiVA: diva2:461095
10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Location: Atlanta, GA Date: SEP 06-09, 2010. QC 201112022011-12-022011-11-212014-12-03Bibliographically approved