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Growth of stoichiometric subnanometer silica films
Fritz Haber Institute. (Chemical Physics)ORCID iD: 0000-0003-1631-4293
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 1Article in journal (Refereed) Published
Abstract [en]

We present a method to grow stoichiometric SiO(2) films of only similar to 0.6-0.9 nm in thickness on a metal substrate. Based on photoelectron and infrared spectroscopy studies, we conclude that the similar to 0.6-nm-thick silica films exhibit characteristics only observed for > 2.0-nm-thick films grown on conventional Si substrates. The films can be used as model oxides for fundamental studies and may have implications on the further miniaturization of metal-oxide-semiconductor transistors.

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2008. Vol. 92, no 1
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URN: urn:nbn:se:kth:diva-49014DOI: 10.1063/1.2824842ISI: 000252284200049OAI: oai:DiVA.org:kth-49014DiVA: diva2:461328
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QC 20111205Available from: 2011-12-02 Created: 2011-11-24 Last updated: 2017-12-08Bibliographically approved

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Weissenrieder, Jonas

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