Growth of stoichiometric subnanometer silica films
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 1Article in journal (Refereed) Published
We present a method to grow stoichiometric SiO(2) films of only similar to 0.6-0.9 nm in thickness on a metal substrate. Based on photoelectron and infrared spectroscopy studies, we conclude that the similar to 0.6-nm-thick silica films exhibit characteristics only observed for > 2.0-nm-thick films grown on conventional Si substrates. The films can be used as model oxides for fundamental studies and may have implications on the further miniaturization of metal-oxide-semiconductor transistors.
Place, publisher, year, edition, pages
2008. Vol. 92, no 1
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-49014DOI: 10.1063/1.2824842ISI: 000252284200049OAI: oai:DiVA.org:kth-49014DiVA: diva2:461328
QC 201112052011-12-022011-11-242011-12-05Bibliographically approved