Low temperature CO induced growth of Pd supported on a monolayer silica film
2006 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 600, no 12, L153-L157 p.Article in journal (Refereed) Published
Nucleation, growth and sintering of Pd deposited on an ultra-thin silica film were studied by scanning tunneling microscopy and infrared reflection absorption spectroscopy. No preferential nucleation of Pd on the silica surface was observed both at 90 and 300 K deposition. When adsorbed on Pd clusters formed at 90 K, CO causes a strong sintering effect even at this temperature. The results are rationalized on the basis of a high mobility of Pd carbonyl-like species on the silica film. At a given Pd coverage, the extent of CO induced sintering cannot be achieved by annealing in vacuum. In addition, vacuum sintering, which commences above 700 K, goes simultaneously with interdiffusion of Pd and support.
Place, publisher, year, edition, pages
2006. Vol. 600, no 12, L153-L157 p.
thin films, silica, nanoparticles, palladium, sintering, CO adsorption
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-49029DOI: 10.1016/j.susc.2006.04.034ISI: 000238893800001OAI: oai:DiVA.org:kth-49029DiVA: diva2:461339
QC 201112052011-12-022011-11-242011-12-05Bibliographically approved