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Miniaturized pressure sensor
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0001-9552-4234
2001 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

An entirely surface micromachined free hanging strain-gauge pressure sensor is disclosed. The sensing element consists of a 80 mum long H-shaped double ended supported force transducing beam ( 16 ). The beam is located beneath and at one end attached to a square polysilicon diaphragm ( 14 ) and at the other end to the cavity edge. The sensor according to the invention enables a combination of high pressure sensitivity and miniature chip size as well as good environmental isolation. The pressure sensitivity for the sensor with a H-shaped force transducing beam, 0.4 mum thick was found to be 5 muV/V/mmHg.

Place, publisher, year, edition, pages
2001.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-51350OAI: oai:DiVA.org:kth-51350DiVA: diva2:463944
Patent
US 7017420-B2 (2006-03-28)
Note

QC 20111212. QC 20130807

Available from: 2011-12-12 Created: 2011-12-12 Last updated: 2013-08-07Bibliographically approved

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Stemme, Göran

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