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Device Modelling for 60 GHz Radio Front-ends in 65 nm CMOS
KTH, School of Information and Communication Technology (ICT), Electronic, Computer and Software Systems, ECS. (RaMSiS Group)ORCID iD: 0000-0002-4691-2318
KTH, School of Information and Communication Technology (ICT), Electronic, Computer and Software Systems, ECS. (RaMSiS Group)
KTH, School of Information and Communication Technology (ICT), Electronic, Computer and Software Systems, ECS. (RaMSiS Group)ORCID iD: 0000-0003-3802-7834
KTH, School of Information and Communication Technology (ICT), Electronic, Computer and Software Systems, ECS. (RaMSiS Group)
2009 (English)In: 2009 NORCHIP, 2009Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents an electromagnetic simulation-based modelling solution for active and passive devices which targets 60 GHz front-end integrated circuits. An EM model, using existing transistor compact models as core, is developed to account for the parasitic elements due to wiring stacks. A spiral inductor lumped model, based on EM simulation S-parameter data is also derived. The models are process and layout dependent, which have been verified by the design of a low noise amplifier in a 60 GHz radio front-end.

Place, publisher, year, edition, pages
2009.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - ICT
Identifiers
URN: urn:nbn:se:kth:diva-51502DOI: 10.1109/NORCHP.2009.5397803Scopus ID: 2-s2.0-77949618725ISBN: 978-1-4244-4311-6 (print)ISBN: 978-1-4244-4310-9 (print)OAI: oai:DiVA.org:kth-51502DiVA: diva2:464339
Conference
2009 NORCHIP. Trondheim. 16 November 2009 - 17 November 2009
Note
QC 20111214Available from: 2011-12-13 Created: 2011-12-13 Last updated: 2011-12-14Bibliographically approved

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Tao, ShaRusu, Ana

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CiteExportLink to record
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