Nanostructured MnGa films on Si/SiO(2) with 20.5 kOe room temperature coercivity
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 9, 093902- p.Article in journal (Refereed) Published
Nanostructured Mn(67)Ga(33) films exhibiting high room temperature coercivity (H(C) = 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest H(C). The large H(C) is linked to the presence of the high anisotropy DO(22) Mn(3)Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands.
Place, publisher, year, edition, pages
2011. Vol. 110, no 9, 093902- p.
MAGNETIC-PROPERTIES, FEPT, MICROSTRUCTURE, DEPENDENCE
IdentifiersURN: urn:nbn:se:kth:diva-52553DOI: 10.1063/1.3656457ISI: 000297062100064ScopusID: 2-s2.0-81355136140OAI: oai:DiVA.org:kth-52553DiVA: diva2:467538
FunderSwedish Research CouncilKnut and Alice Wallenberg FoundationEU, FP7, Seventh Framework Programme, FP7-PEOPLE-2009-IRSES-247518
QC 201112192011-12-192011-12-192011-12-19Bibliographically approved