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Nanostructured MnGa films on Si/SiO(2) with 20.5 kOe room temperature coercivity
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
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2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 9, 093902- p.Article in journal (Refereed) Published
Abstract [en]

Nanostructured Mn(67)Ga(33) films exhibiting high room temperature coercivity (H(C) = 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest H(C). The large H(C) is linked to the presence of the high anisotropy DO(22) Mn(3)Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands.

Place, publisher, year, edition, pages
2011. Vol. 110, no 9, 093902- p.
Keyword [en]
MAGNETIC-PROPERTIES, FEPT, MICROSTRUCTURE, DEPENDENCE
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-52553DOI: 10.1063/1.3656457ISI: 000297062100064Scopus ID: 2-s2.0-81355136140OAI: oai:DiVA.org:kth-52553DiVA: diva2:467538
Funder
Swedish Research CouncilKnut and Alice Wallenberg FoundationEU, FP7, Seventh Framework Programme, FP7-PEOPLE-2009-IRSES-247518
Note
QC 20111219Available from: 2011-12-19 Created: 2011-12-19 Last updated: 2017-12-08Bibliographically approved

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CiteExportLink to record
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  • apa
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