In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, 583-586 p.Article in journal (Refereed) Published
The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.
Place, publisher, year, edition, pages
Elsevier, 2006. Vol. 515, no 2, 583-586 p.
in situ resistivity, thin film, magnetron sputtering, lattice matching
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-53069DOI: 10.1016/j.tsf.2005.12.174ISI: 000241220600048ScopusID: 2-s2.0-33748747131OAI: oai:DiVA.org:kth-53069DiVA: diva2:468862
QC 20120125. 12th International Conference on Thin Films, BRATISLAVA, SLOVAKIA, SEP 15-20, 20022011-12-212011-12-212016-07-21Bibliographically approved