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In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
Lyfjathroun Biopharmaceuticals, Iceland.ORCID iD: 0000-0001-9008-8402
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2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, 583-586 p.Article in journal (Refereed) Published
Description
Abstract [en]

The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.

Place, publisher, year, edition, pages
Elsevier, 2006. Vol. 515, no 2, 583-586 p.
Keyword [en]
in situ resistivity, thin film, magnetron sputtering, lattice matching
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-53069DOI: 10.1016/j.tsf.2005.12.174ISI: 000241220600048Scopus ID: 2-s2.0-33748747131OAI: oai:DiVA.org:kth-53069DiVA: diva2:468862
Note

QC 20120125. 12th International Conference on Thin Films, BRATISLAVA, SLOVAKIA, SEP 15-20, 2002

Available from: 2011-12-21 Created: 2011-12-21 Last updated: 2017-12-08Bibliographically approved

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Gylfason, Kristinn B.

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