Direct graphene growth on insulator
2011 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 248, no 11, 2619-2622 p.Article in journal (Refereed) Published
Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600 degrees C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel.
Place, publisher, year, edition, pages
2011. Vol. 248, no 11, 2619-2622 p.
graphene, growth, insulator, MBE
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-55258DOI: 10.1002/pssb.201100052ISI: 000297517100044ScopusID: 2-s2.0-84857265824OAI: oai:DiVA.org:kth-55258DiVA: diva2:471453
QC 201201022012-01-022012-01-022012-01-02Bibliographically approved