Radiation-Hard Dielectrics for 4H-SiC: A Comparison Between SiO(2) and Al(2)O(3)
2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 12, 1653-1655 p.Article in journal (Refereed) Published
Ion implantation effects at SiO(2)/SiC and Al(2)O(3)/SiC interfaces have been investigated by implanting Ar ions at the interface of oxide and SiC. Capacitance-voltage relation and breakdown properties for these dielectrics are studied before and after implantation. The results indicate that the SiO(2)/SiC interface is sensitive to ion fluences higher than 1 x 10(11) cm(-2), while Al(2)O(3) on SiC can sustain higher fluences. In addition, the breakdown of the Al(2)O(3) is found to be less sensitive to the ion implantation.
Place, publisher, year, edition, pages
2011. Vol. 32, no 12, 1653-1655 p.
Device passivation, dielectrics, elastic scattering, ion radiation effects, metal-oxide-semiconductor (MOS) interface, 4H-SiC
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-55242DOI: 10.1109/LED.2011.2166992ISI: 000297352500002ScopusID: 2-s2.0-81855163341OAI: oai:DiVA.org:kth-55242DiVA: diva2:474507
QC 201201092012-01-092012-01-022012-01-17Bibliographically approved