Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A 3.6 mW 90 nm CMOS 2.4 GHz Receiver Front-End Design for IEEE 802.15.4 WSNs
Universita Politecnica delle Marche.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Integrated Devices and Circuits)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0003-3802-7834
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
Show others and affiliations
2009 (English)In: ISSCS 2009: INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS, VOLS 1 AND 2, PROCEEDINGS, New York: IEEE , 2009, 77-80 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper a low-power design of an integrated RF receiver for Wireless Sensor Networks (WSNs) in 90nm CMOS technology is proposed. The receiver is IEEE 802.15.4 physical specifications compliant. It is designed to operate in ISM band at 2.45 GHz center frequency. Target devices for this kind of transceiver are low-cost battery powered smart embedded devices and sensors. The receiver is designed to reduce the count of external components in the final system, integrating on silicon the balun for single-ended to differential conversion. The receiver is composed of an inductorless Low Noise Amplifier (LNA), a buffer stage, I and Q passive mixers and Variable Gain Amplifiers (VGAs) that also act as second order filters. A novel integration of balun into the LNA is described. The system is designed to have direct conversion from RF to 6 MHz low-IF. Voltage supply is 1.2 V with a current consumption of 3 mA including necessary biasing networks, and the total power consumption is 3.6 mW. The complete voltage gain is more than 41.5 dB with a Noise Figure (NF) of 12.6 dB. The receiver layout exhibits an area of only 0.12 mm(2). Simulations are provided, including mismatch scenarios.

Place, publisher, year, edition, pages
New York: IEEE , 2009. 77-80 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-59223DOI: 10.1109/ISSCS.2009.5206198ISI: 000275854200019Scopus ID: 2-s2.0-70449491344ISBN: 978-1-4244-3784-9 (print)OAI: oai:DiVA.org:kth-59223DiVA: diva2:475409
Conference
2009 International Symposium on Signals, Circuits and Systems, ISSCS 2009; Iasi; 9 July 2009 through 10 July 2009
Note
QC 20120124Available from: 2012-01-10 Created: 2012-01-10 Last updated: 2012-01-24Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Rusu, Ana

Search in DiVA

By author/editor
Rodriguez, SaulRusu, AnaIsmail, Mohammed
By organisation
Microelectronics and Information Technology, IMIT
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 50 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf