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Analog-type millimeter-wave phase shifters based on MEMS tunable high-impedance surface and dielectric rod waveguide
Department of Radio Science and Engineering, SMARAD Centre of Excellence, Aalto University.
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
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2011 (English)In: International Journal of Microwave and Wireless Technologies, ISSN 1759-0787, Vol. 3, no 5, 533-538 p.Article in journal (Refereed) Published
Abstract [en]

Millimeter-wave phase shifters are important components for a wide scope of applications. An analog-type phase shifter for W-band has been designed, analyzed, fabricated, and measured. The phase shifter consists of a reconfigurable high-impedance surface (HIS) controlled by micro-electromechanical system (MEMS) varactors and placed adjacent to a silicon dielectric rod waveguide. The analog-type phase shift in the range of 0–32° is observed at 75 GHz whereas applying bias voltage from 0 to 40 V to the MEMS varactors. The insertion loss of the MEMS tunable HIS is between 1.7 and 5 dB, depending on the frequency.

Place, publisher, year, edition, pages
Cambridge University Press and the European Microwave Association , 2011. Vol. 3, no 5, 533-538 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-61049DOI: 10.1017/S1759078711000821ISI: 000208613500005ScopusID: 2-s2.0-80455156017OAI: diva2:478426

QC 20120119

Available from: 2012-01-19 Created: 2012-01-16 Last updated: 2013-12-02Bibliographically approved
In thesis
1. Monocrystalline-Silicon Based RF MEMS Devices
Open this publication in new window or tab >>Monocrystalline-Silicon Based RF MEMS Devices
2012 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents novel radio-frequency microelectromechanical (RF MEMS) devices, for microwave and millimeter wave applications, designed for process robustness and operational reliability using monocrystalline silicon as structural material. Two families of RF MEMS devices are proposed. The first comprises reconfigurable microwave components integrated with coplanar-waveguide transmission lines in the device layer of silicon-on-insulator wafers. The second consists of analog tuneable millimeter wave high-impedance surface arrays.

The first group of reconfigurable microwave components presented in this thesis is based on a novel concept of integrating MEMS functionality into the sidewalls of three-dimensional micromachined transmission lines. A laterally actuated metal-contact switch was implemented, with the switching mechanism completely embedded inside the signal line of a coplanar-waveguide transmission line. The switch features zero power-consumption in both the on and the off state since it is mechanically bistable, enabled by interlocking hooks. Both two-port and three-port configurations are presented. Furthermore, tuneable capacitors based on laterally moving the ground planes in a micromachined coplanar-waveguide transmission line are demonstrated.

The second group of reconfigurable microwave components comprises millimeter-wave high-impedance surfaces. Devices are shown for reflective beam steering, reflective stub-line phase shifters and proximity based dielectric rod waveguide phase shifters, as well as a steerable leaky-wave antenna device based on the same geometry. Full wafer transfer bonding of symmetrically metallized monocrystalline silicon membranes, for near-ideal stress compensation, is used to create large arrays of distributed MEMS tuning elements. Furthermore, this thesis investigates the integration of reflective MEMS millimeter wave devices in rectangular waveguides using a conductive adhesive tape, and the integration of substrates with mismatched coefficients of thermal expansion.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. x, 67 p.
Trita-EE, ISSN 1653-5146 ; 2012:050
RF MEMS, radio frequency, microelectromechanical system, microsystem technology, monocrystalline silicon, switch, tuneable capacitor, high-impedace surface, phase shifter, rectangular waveguide, transmission line
National Category
Engineering and Technology
urn:nbn:se:kth:diva-104314 (URN)978-91-7501-532-3 (ISBN)
Public defence
2012-11-23, F3, Lindstedtsvägen 26, KTH, Stockholm, 10:00 (English)

QC 20121101

Available from: 2012-11-01 Created: 2012-10-31 Last updated: 2012-11-01Bibliographically approved

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Sterner, MikaelOberhammer, Joachim
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