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Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. (EKT)ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. (EKT)
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. (EKT)ORCID iD: 0000-0002-5845-3032
2011 (English)In: Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011, IEEE Computer Society, 2011, 135-138 p.Conference paper, Published paper (Refereed)
Abstract [en]

Schottky-barrier source/drain (SB-S/D) is a promising solution for low-resistive contact formation in fully depleted SOI ultra-thin body (UTB) FETs, or FinFETs. In this study the low-frequency noise of FinFETs and UTB-FETs, with platinum-silicide based source/drain contacts with low barrier height was characterized. The barrier height was tuned by means of segregation of implanted As or B. In the linear region of operation the noise power spectral density of devices with different barrier heights was not significantly affected for a given drain current. This suggests that channel noise dominates the behavior and that the low effective Schottky barrier height in dopant segregated devices does not introduce additional noise.

Place, publisher, year, edition, pages
IEEE Computer Society, 2011. 135-138 p.
Keyword [en]
assymetric FET, dopant segregation, FinFET, low-frequency noise, Schottky barrier source/drain, trigate, ultra-thin body
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-61194DOI: 10.1109/ICNF.2011.5994282ISI: 000309730300033Scopus ID: 2-s2.0-80052742151ISBN: 978-145770192-4 (print)OAI: oai:DiVA.org:kth-61194DiVA: diva2:478730
Conference
21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, 12 June 2011 through 16 June 2011
Funder
EU, European Research Council, 91069Swedish Research Council, 2008-5465
Note

QC 20120305

Available from: 2012-01-16 Created: 2012-01-16 Last updated: 2015-11-30Bibliographically approved
In thesis
1. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Open this publication in new window or tab >>Low-frequency noise in high-k gate stacks with interfacial layer engineering
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. One of the main issues is the escalating 1/fnoise level, which leads to degradation of signal-to-noise ratio (SNR) in electronic circuits. The focus of this thesis is on low-frequency noise characterization and modeling of various novel CMOS devices. The devices include PtSi Schottky-barriers  for source/drain contactsand different high-kgatestacksusingHfO2, LaLuO3 and Tm2O3 with different interlayers. These devices vary in the high-k material, high-k thickness, high-k deposition method and interlayermaterial. Comprehensive electrical characterization and low-frequency noise characterization were performed on various devices at different operating conditions. The noise results were analyzed and models were suggested in order to investigate the origin of 1/f noise in these devices. Moreover, the results were compared to state-of-the-art devices.

High constant dielectrics limit the leakage current by offering a higher physical dielectric thickness while keeping the Equivalent Oxide Thickness (EOT) low. Yet, the 1/f noise increases due to higher number of traps in the dielectric and also deterioration of the interface with silicon compared to SiO2. Therefore, in order to improve the interface quality, applying an interfacial layer (IL) between the high-k layer and silicon is inevitable. Very thin, uniform insitu fabricated SiO2 interlayers with HfO2 high-k dielectric have been characterized. The required thickness of SiO2 as IL for further scaling has now reached below 0.5 nm. Thus, one of the main challenges at the current technology node is engineering the interfacial layer in order to achieve both high quality interface and low EOT. High-k ILs are therefore proposed to substitute SiOx dielectrics to fulfill this need. In this work, we have made the first experiments on low-frequency noise studies on TmSiO as a high-k interlayer with Tm2O3 or HfO2 on top as high-k dielectric. The TmSiO/Tm2O3 shows a lower level of noise which is suggested to be related to smoother interface between the TmSiO and Tm2O3. We have achieved excellentnoise performancefor TmSiO/Tm2O3 and TmSiO/HfO2 gate stacks which are comparableto state-of-the-art SiO2/HfO2 gate stacks.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xv, 60 p.
Series
TRITA-ICT, 2015:21
Keyword
CMOS, high k, 1/ f noise, low-frequency noise, number fluctuations, mobility fluctuat ions, traps, interfacial layer, TmSiO, Tm 2O3
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-177911 (URN)978-91-7595-751-7 (ISBN)
Public defence
2015-12-18, Sal/hall C, Elektrum, KTH-ICT, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20151130

Available from: 2015-11-30 Created: 2015-11-30 Last updated: 2015-11-30Bibliographically approved

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Malm, Gunnar

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