Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts
2011 (English)In: Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011, IEEE Computer Society, 2011, 135-138 p.Conference paper (Refereed)
Schottky-barrier source/drain (SB-S/D) is a promising solution for low-resistive contact formation in fully depleted SOI ultra-thin body (UTB) FETs, or FinFETs. In this study the low-frequency noise of FinFETs and UTB-FETs, with platinum-silicide based source/drain contacts with low barrier height was characterized. The barrier height was tuned by means of segregation of implanted As or B. In the linear region of operation the noise power spectral density of devices with different barrier heights was not significantly affected for a given drain current. This suggests that channel noise dominates the behavior and that the low effective Schottky barrier height in dopant segregated devices does not introduce additional noise.
Place, publisher, year, edition, pages
IEEE Computer Society, 2011. 135-138 p.
assymetric FET, dopant segregation, FinFET, low-frequency noise, Schottky barrier source/drain, trigate, ultra-thin body
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-61194DOI: 10.1109/ICNF.2011.5994282ISI: 000309730300033ScopusID: 2-s2.0-80052742151ISBN: 978-145770192-4OAI: oai:DiVA.org:kth-61194DiVA: diva2:478730
21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, 12 June 2011 through 16 June 2011
FunderEU, European Research Council, 91069Swedish Research Council, 2008-5465
QC 201203052012-01-162012-01-162015-11-30Bibliographically approved