Effect of nuclear scattering damage at the SiO2/SiC and Al2O3/SiC interface: A radiation hardness study of dielectrics
2012 (English)In: Silicon Carbide And Related Materials 2011, Pts 1 And 2, Trans Tech Publications Inc., 2012, Vol. 717-720, 805-808 p.Conference paper (Refereed)
The radiation hardness of Al2O3 as a dielectric for SiC surface passivation is studied and compared to SiO2 for potential application in radiation hard SiC devices. SiO2 is deposited on 4H-SiC by PECVD and post annealed in N2O, whereas Al2O3 is deposited by atomic layer deposition (ALD). The oxides are bombarded with Ar ions in an energy range to produce maximum damage near the oxide/SiC interface. Metal-insulator-semiconductor structures are prepared and their dielectric characteristics are analyzed using capacitance-voltage measurements. Additionally, the effect of the interface damage on surface recombination is studied using the optical free carrier absorption method for the same samples. The results indicate that the SiO2/SiC interface is significantly affected at 1×1011 cm-2 fluence of Ar ions, however, the dielectric properties of Al2O3/SiC interface remain unaffected even for ten times higher fluences. Similar observations are made for the surface recombination measurements.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 805-808 p.
, Materials Science Forum, ISSN 0255-5476 ; 717-720
4H-SiC, High-k Dielectrics, Interface Damage, MIS, Radiation Hardness
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-61428DOI: 10.4028/www.scientific.net/MSF.717-720.805ISI: 000309431000191ScopusID: 2-s2.0-84861374648OAI: oai:DiVA.org:kth-61428DiVA: diva2:479074
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201208062012-01-172012-01-172013-09-12Bibliographically approved