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Defect evolution and impurity migration in Na-implanted ZnO
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 20, 205202- p.Article in journal (Refereed) Published
Abstract [en]

Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na(+) implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600 degrees C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

Place, publisher, year, edition, pages
2011. Vol. 84, no 20, 205202- p.
Keyword [en]
SLOW POSITRON BEAM; ZINC-OXIDE; SINGLE-CRYSTALS; POINT-DEFECTS
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Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-50312DOI: 10.1103/PhysRevB.84.205202ISI: 000296877600001Scopus ID: 2-s2.0-82655169490OAI: oai:DiVA.org:kth-50312DiVA: diva2:480307
Note
Qc 20120119Available from: 2012-01-19 Created: 2011-12-05 Last updated: 2017-12-08Bibliographically approved

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Hallén, Anders

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